Formation of n-channel polycrystalline-Si thin-film transistors by using retrograde channel scheme with double implantation
| Autor: | Juang, Miin-Horng a, ⁎, Huang, C.W. b, Wu, M.-L. a, Hwang, C.C. b, Wang, J.L. b, Shye, D.C. b, Jang, S.-L. a |
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| Zdroj: | In Microelectronic Engineering 2010 87(4):620-623 |
| Databáze: | ScienceDirect |
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