Post Si(C)N hillock nucleation and growth in IC copper lines controlled by diffusional creep

Autor: Timma, A., Caubet, P., Chenevier, B., Thomas, O., Kaouache, B., Dumas, L., Normandon, P., Giraudin, J.C.
Zdroj: In Microelectronic Engineering 2010 87(3):361-364
Databáze: ScienceDirect