Ge integration on Si via rare earth oxide buffers: From MBE to CVD (Invited Paper)

Autor: Schroeder, T., Giussani, A., Muessig, H.-J., Weidner, G., Costina, I., Wenger, Ch., Lukosius, M., Storck, P., Zaumseil, P.
Zdroj: In Microelectronic Engineering 2009 86(7):1615-1620
Databáze: ScienceDirect