Tuning the dipole at the High-κ/SiO 2 interface in advanced metal gate stacks
Autor: | Charbonnier, M., Leroux, C., Cosnier, V., Besson, P., Martin, F., Ghibaudo, G., Reimbold, G. |
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Zdroj: | In Microelectronic Engineering 2009 86(7):1740-1742 |
Databáze: | ScienceDirect |
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