Tuning the dipole at the High-κ/SiO 2 interface in advanced metal gate stacks

Autor: Charbonnier, M., Leroux, C., Cosnier, V., Besson, P., Martin, F., Ghibaudo, G., Reimbold, G.
Zdroj: In Microelectronic Engineering 2009 86(7):1740-1742
Databáze: ScienceDirect