Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)
Autor: | Congedo, G., Spiga, S., Lamagna, L., Lamperti, A., Lebedinskii, Yu., Matveyev, Yu., Zenkevich, A., Chernykh, P., Fanciulli, M. |
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Zdroj: | In Microelectronic Engineering 2009 86(7):1696-1699 |
Databáze: | ScienceDirect |
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