Effect of high-temperature annealing on lanthanum aluminate thin films grown by ALD on Si(1 0 0)

Autor: Congedo, G., Spiga, S., Lamagna, L., Lamperti, A., Lebedinskii, Yu., Matveyev, Yu., Zenkevich, A., Chernykh, P., Fanciulli, M.
Zdroj: In Microelectronic Engineering 2009 86(7):1696-1699
Databáze: ScienceDirect