Experimental demonstration and analysis of high performance and low 1/f noise Tri-gate MOSFETs by optimizing device structure
Autor: | Cheng, Weitao, Teramoto, Akinobu, Ohmi, Tadahiro |
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Zdroj: | In Microelectronic Engineering 2009 86(7):1786-1788 |
Databáze: | ScienceDirect |
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