Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals

Autor: Kaczer, B., Veloso, A., Aoulaiche, M., Groeseneken, G.
Zdroj: In Microelectronic Engineering 2009 86(7):1894-1896
Databáze: ScienceDirect