Significant reduction of Positive Bias Temperature Instability in high-k/metal-gate nFETs by incorporation of rare earth metals
Autor: | Kaczer, B., Veloso, A., Aoulaiche, M., Groeseneken, G. |
---|---|
Zdroj: | In Microelectronic Engineering 2009 86(7):1894-1896 |
Databáze: | ScienceDirect |
Externí odkaz: |