A study on fluorine incorporation in Ge p-MOS capacitors with HfTiON dielectric

Autor: Li, C.X., Wang, C.D., Leung, C.H., Lai, P.T., Xu, J.P.
Zdroj: In Microelectronic Engineering 2009 86(7):1596-1598
Databáze: ScienceDirect