A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties

Autor: Zegaoui, M., Choueib, N., Tilmant, P., François, M., Legrand, C., Chazelas, J., Decoster, D.
Zdroj: In Microelectronic Engineering 2009 86(1):68-71
Databáze: ScienceDirect