A Novel Bondpad report process for III–V semiconductor devices using full HSQ properties
Autor: | Zegaoui, M., Choueib, N., Tilmant, P., François, M., Legrand, C., Chazelas, J., Decoster, D. |
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Zdroj: | In Microelectronic Engineering 2009 86(1):68-71 |
Databáze: | ScienceDirect |
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