Impact of preanneal process on threshold voltage of MOS transistors for trench DRAM
| Autor: | Wu, Yung-Hsien, Chang, Chih-Ming, Wang, Chun-Yao, Kao, Chien-Kang, Kuo, Chia-Ming, Ku, Alex |
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| Zdroj: | In Microelectronic Engineering 2009 86(1):33-36 |
| Databáze: | ScienceDirect |
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