New selector based on zinc oxide grown by low temperature atomic layer deposition for vertically stacked non-volatile memory devices
| Autor: | Huby, N., Tallarida, G., Kutrzeba, M., Ferrari, S., Guziewicz, E., Wachnicki, Ł., Godlewski, M. |
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| Zdroj: | In Microelectronic Engineering 2008 85(12):2442-2444 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect