Strained Si/SiGe MOS technology: Improving gate dielectric integrity
| Autor: | Olsen, S.H., Yan, L., Agaiby, R., Escobedo-Cousin, E., O’Neill, A.G., Hellström, P.-E., Östling, M., Lyutovich, K., Kasper, E., Claeys, C., Parker, E.H.C. |
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| Zdroj: | In Microelectronic Engineering 2009 86(3):218-223 |
| Databáze: | ScienceDirect |
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