Patterning of narrow porous SiOCH trenches using a TiN hard mask

Autor: Darnon, M., Chevolleau, T., Eon, D., Bouyssou, R., Pelissier, B., Vallier, L., Joubert, O., Posseme, N., David, T., Bailly, F., Torres, J.
Zdroj: In Microelectronic Engineering 2008 85(11):2226-2235
Databáze: ScienceDirect