Improvement of thermal stability of Ni silicide on N +–Si by direct deposition of group III element (Al, B) thin film at Ni/Si interface
| Autor: | Tsutsui, Kazuo, Shiozawa, Takashi, Nagahiro, Koji, Ohishi, Yoshihisa, Kakushima, Kuniyuki, Ahmet, Parhat, Urushihara, Nobuyuki, Suzuki, Mineharu, Iwai, Hiroshi |
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| Zdroj: | In Microelectronic Engineering 2008 85(10):2000-2004 |
| Databáze: | ScienceDirect |
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