Effect of Si capping layer on the interface quality and NBTI of high mobility channel Ge-on-Si pMOSFETs
| Autor: | Yoo, Ook Sang, Oh, Jungwoo, Min, Kyung Seok, Kang, Chang Yong, Lee, B.H., Lee, Kyong Taek, Na, Min Ki, Kwon, Hyuk-Min, Majhi, P., Tseng, H-H, Jammy, Raj, Wang, J.S., Lee, Hi-Deok |
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| Zdroj: | In Microelectronic Engineering 2009 86(3):259-262 |
| Databáze: | ScienceDirect |
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