High performance and highly reliable novel CMOS devices using accumulation mode multi-gate and fully depleted SOI MOSFETs
| Autor: | Cheng, W., Teramoto, A., Kuroda, R., Hirayama, M., Ohmi, T. |
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| Zdroj: | In Microelectronic Engineering 2007 84(9):2105-2108 |
| Databáze: | ScienceDirect |
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Full Text from ScienceDirect