Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc 2O 3, Lu 2O 3, LaLuO 3
| Autor: | Afanas’ev, V.V., Shamuilia, S., Badylevich, M., Stesmans, A., Edge, L.F., Tian, W., Schlom, D.G., Lopes, J.M.J., Roeckerath, M., Schubert, J. |
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| Zdroj: | In Microelectronic Engineering 2007 84(9):2278-2281 |
| Databáze: | ScienceDirect |
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