Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements
Autor: | Xiong, H.D., Heh, D., Gurfinkel, M., Li, Q., Shapira, Y., Richter, C., Bersuker, G., Choi, R., Suehle, J.S. |
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Zdroj: | In Microelectronic Engineering 2007 84(9):2230-2234 |
Databáze: | ScienceDirect |
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