Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

Autor: Xiong, H.D., Heh, D., Gurfinkel, M., Li, Q., Shapira, Y., Richter, C., Bersuker, G., Choi, R., Suehle, J.S.
Zdroj: In Microelectronic Engineering 2007 84(9):2230-2234
Databáze: ScienceDirect