Improved electrical characteristics of high-k gated MOS devices by nitrogen incorporation with plasma immersion ion implantation (PIII)

Autor:	Tsai, Ping-Hung, Chang-Liao, Kuei-Shu, Kao, H.Y., Wang, T.K., Huang, S.F., Tsai, W.F., Ai, C.F.
Zdroj:	In Microelectronic Engineering 2007 84(9):2192-2195
Databáze:	ScienceDirect
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect