Impact of weak Fermi-level pinning on the correct interpretation of III-V MOS C-V and G-V characteristics

Autor: Martens, K., Wang, W., De Keersmaecker, K., Borghs, G., Groeseneken, G., Maes, H.
Zdroj: In Microelectronic Engineering 2007 84(9):2146-2149
Databáze: ScienceDirect