Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

Autor: Fernández-Bolaños, M., Abelé, N., Pott, V., Bouvet, D., Racine, G-A., Quero, J.M., Ionescu, A.M.
Zdroj: In Microelectronic Engineering 2006 83(4):1185-1188
Databáze: ScienceDirect