Defect-engineering in SiC by ion implantation and electron irradiation
Autor: | Pensl, G., Ciobanu, F., Frank, T., Kirmse, D., Krieger, M., Reshanov, S., Schmid, F., Weidner, M., Ohshima, T., Itoh, H., Choyke, W.J. |
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Zdroj: | In Microelectronic Engineering 2006 83(1):146-149 |
Databáze: | ScienceDirect |
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