Defect-engineering in SiC by ion implantation and electron irradiation

Autor: Pensl, G., Ciobanu, F., Frank, T., Kirmse, D., Krieger, M., Reshanov, S., Schmid, F., Weidner, M., Ohshima, T., Itoh, H., Choyke, W.J.
Zdroj: In Microelectronic Engineering 2006 83(1):146-149
Databáze: ScienceDirect