Dislocation processes during SiC bulk crystal growth

Autor: Ohtani, Noboru, Katsuno, Masakazu, Tsuge, Hiroshi, Fujimoto, Tatsuo, Nakabayashi, Masashi, Yashiro, Hirokatsu, Sawamura, Mitsuru, Aigo, Takashi, Hoshino, Taizo
Zdroj: In Microelectronic Engineering 2006 83(1):142-145
Databáze: ScienceDirect