New Charge Pumping model for the analysis of the spatial trap distribution in the nitride layer of SONOS devices
| Autor: | Arreghini, A., Driussi, F., Esseni, D., Selmi, L., van Duuren, M.J., van Schaijk, R. |
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| Zdroj: | In Microelectronic Engineering 17 June 2005 80:333-336 |
| Databáze: | ScienceDirect |
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