Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures
| Autor: | Abdullah, K.A., Abdullah, M.J., Yam, F.K., Hassan, Z. |
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| Zdroj: | In Microelectronic Engineering 2005 81(2):201-205 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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| Autor: | Abdullah, K.A., Abdullah, M.J., Yam, F.K., Hassan, Z. |
|---|---|
| Zdroj: | In Microelectronic Engineering 2005 81(2):201-205 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
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Full Text from ScienceDirect