Origin, control and elimination of undercut in silicon deep plasma etching in the cryogenic process

Autor: Boufnichel, M., Lefaucheux, P., Aachboun, S., Dussart, R. *, Ranson, P.
Zdroj: In Microelectronic Engineering 2005 77(3):327-336
Databáze: ScienceDirect