Ni-salicided CMOS with a poly-SiGe/Al 2O 3/HfO 2/Al 2O 3 gate stack
| Autor: | Wu, D. *, von Haartman, M., Seger, J., Tois, E., Tuominen, M., Hellström, P.-E., Östling, M., Zhang, S.-L. |
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| Zdroj: | In Microelectronic Engineering 2005 77(1):36-41 |
| Databáze: | ScienceDirect |
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