Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties
| Autor: | Schwank, J.R, Fleetwood, D.M, Xiong, H.D, Shaneyfelt, M.R, Draper, B.L |
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| Zdroj: | In Microelectronic Engineering 2004 72(1):362-366 |
| Databáze: | ScienceDirect |
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