Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Autor: Felix, J.A., Schwank, J.R., Cirba, C.R., Schrimpf, R.D., Shaneyfelt, M.R., Fleetwood, D.M., Dodd, P.E.
Zdroj: In Microelectronic Engineering 2004 72(1):332-341
Databáze: ScienceDirect