Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films
Autor: | Kaouache, B., Gergaud, P., Thomas, O., Bostrom, O., Legros, M. ∗ |
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Zdroj: | In Microelectronic Engineering 2003 70(2):447-454 |
Databáze: | ScienceDirect |
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