Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films

Autor: Kaouache, B., Gergaud, P., Thomas, O., Bostrom, O., Legros, M.
Zdroj: In Microelectronic Engineering 2003 70(2):447-454
Databáze: ScienceDirect