Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba 2Cu 3O 7− δ superconducting devices on silicon
| Autor: | Huot, G. *, Méchin, L., Bloyet, D. |
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| Zdroj: | In Microelectronic Engineering 2003 70(2):246-250 |
| Databáze: | ScienceDirect |
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