Oxygen vacancy defects in tantalum pentoxide: a density functional study

Autor: Ramprasad, R. , Sadd, Michael, Roberts, Doug, Remmel, Tom, Raymond, Mark, Luckowski, Eric, Kalpat, Sriram, Barron, Carole, Miller, Mel
Zdroj: In Microelectronic Engineering 2003 69(2):190-194
Databáze: ScienceDirect