Effect of interfacial oxide on electron mobility in metal insulator semiconductor field effect transistors with Al 2O 3 gate dielectrics
| Autor: | Torii, Kazuyoshi, Shimamoto, Yasuhiro, Saito, Shin-ichi ∗, Obata, Katsunori, Yamauchi, Tsuyoshi, Hisamoto, Digh, Onai, Takahiro, Hiratani, Masahiko |
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| Zdroj: | In Microelectronic Engineering 2003 65(4):447-453 |
| Databáze: | ScienceDirect |
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