Formation of stacking faults in nitrogen-doped silicon single crystals

Autor: Ammon, W.v ∗, Hölzl, R, Wetzel, T, Zemke, D, Raming, G, Blietz, M
Zdroj: In Microelectronic Engineering 2003 66(1):234-246
Databáze: ScienceDirect
Externí odkaz: