Improvement of alignment tolerance against contact hole etching by growing of underlying silicon-selective epitaxial layer
| Autor: | Nakahata, Takumi ∗, Sugihara, Kohei, Furukawa, Taisuke, Nishioka, Yasutaka, Maruno, Shigemitsu, Abe, Yuji, Tokuda, Yasunori, Satoh, Shinichi |
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| Zdroj: | In Microelectronic Engineering 2001 56(3):281-287 |
| Databáze: | ScienceDirect |
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