Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface
| Autor: | Evstratov, I.Yu, Kalaev, V.V, Nabokov, V.N, Zhmakin, A.I, Makarov, Yu.N *, Abramov, A.G, Ivanov, N.G, Rudinsky, E.A, Smirnov, E.M, Lowry, S.A, Dornberger, E, Virbulis, J, Tomzig, E, Ammon, W.v |
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| Zdroj: | In Microelectronic Engineering 2001 56(1):139-142 |
| Databáze: | ScienceDirect |
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