A 2 million transistor digital processor with 120 nm gates fabricated by 248 nm wavelength phase shift technology
Autor: | Watson, G.P., Kizilyalli, I.C., Miller, M., Wang, Y.T., Pati, B., Cirelli, R.A., Nalamasu, O., Radosevich, J., Kohler, R., Freyman, R., Baumann, F., Klemens, F., Mansfield, W., Vaidya, H., Frackoviak, J., Timko, A., Barr, D.L., Bolan, K. |
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Zdroj: | In Microelectronic Engineering 2000 53(1):101-104 |
Databáze: | ScienceDirect |
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