High quality GaN grown on polycrystalline diamond substrates with h-BN insertion layers by MOCVD
| Autor: | Xu, Wenqiang, Xu, Shengrui, Tao, Hongchang, Gao, Yuan, Fan, Xiaomeng, Du, Jinjuan, Ai, Lixia, Peng, Liping, Zhang, Jinfeng, Zhang, Jincheng, Hao, Yue |
|---|---|
| Zdroj: | In Materials Letters 15 December 2021 305 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect