Optimization of Reactive-Ion Etching (RIE) parameters to maximize the lateral etch rate of silicon using SF6/N2 gas mixture: An alternative to etching Si in MEMS with Au components
| Autor: | Kazar Mendes, M., Ghouila-Houri, C., Hammami, S., Arnoult, T., Pernod, P., Talbi, A. |
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| Zdroj: | In Materials Letters 15 February 2021 285 |
| Databáze: | ScienceDirect |
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