Structural characterization of GaSb-capped InAs/GaAs quantum dots with a GaAs intermediate layer

Autor: Beltran, A.M., Ben, T., Sanchez, A.M., Ripalda, J.M., Taboada, A.G., Molina, S.I.
Zdroj: In Materials Letters 2011 65(11):1608-1610
Databáze: ScienceDirect