Growth of ZnO crystal on sapphire and nitridated sapphire substrates at 1000 °C by halide vapor phase epitaxy

Autor: Yoshii, Naoki, Fujii, Tetsuo, Masuda, Rui, Hosaka, Shigetoshi, Kamisawa, Akira, Kumagai, Yoshinao, Koukitu, Akinori
Zdroj: In Materials Letters 2010 64(1):25-27
Databáze: ScienceDirect