Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current
| Autor: | Wang, Qi, Itoh, Yaomi, Tsuruoka, Tohru, Aono, Masakazu, He, Deyan, Hasegawa, Tsuyoshi |
|---|---|
| Zdroj: | In Solid State Ionics 15 December 2018 328:30-34 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|
Full Text from ScienceDirect