Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors
| Autor: | Butola, Rajat, Li, Yiming, Kola, Sekhar Reddy, Akbar, Chandni, Chuang, Min-Hui |
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| Zdroj: | In Computers and Electrical Engineering January 2023 105 |
| Databáze: | ScienceDirect |
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