Effects of wet chemical etching on surface band bending and electrical properties of Sn-doped β-Ga2O3 (101) substrate

Autor: Yu, Zhihong a, 1, Wang, Rui a, 1, Wang, Zining a, Xu, Mujie a, Hou, Tong b, Fu, Bo a, b, ⁎, Gong, Dunwei a, Shi, Yujun c
Zdroj: In Vacuum March 2025 233
Databáze: ScienceDirect