Tailoring oxygen vacancies in Ga2O3 thin films and controlled formation of Ga2O3/SiO2 heterostructures via annealing

Autor: Al Ghaithi, Asma O., Taha, Inas, Ansari, Sumayya M., Rajput, Nitul, Mohammad, Baker, Aldosari, Haila M.
Zdroj: In Vacuum January 2025 231 Part A
Databáze: ScienceDirect