The migration behaviour of strontium co-implanted with helium into SiC at room temperature and annealed at temperatures above 1000 °C
| Autor: | Hlatshwayo, T.T., Mokgadi, T.F., Sohatsky, A., Abdalla, Z.A.Y., Skuratov, V.A., Njoroge, E.G., Mlambo, M. |
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| Zdroj: | In Vacuum December 2024 230 |
| Databáze: | ScienceDirect |
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