Performance improvement of bilayer memristor based on hafnium oxide by Ti/W synergy and its synaptic behavior

Autor: Wang, Fei, Wang, Fang, Lin, Xin, Liu, Ping, Li, Zewen, Du, Hongshun, Chen, Xingbo, Hu, Kai, Wang, Yuchan, Song, Zhitang, Zhang, Kailiang
Zdroj: In Vacuum September 2024 227
Databáze: ScienceDirect