Band alignment and electronic structure of β-Ga2O3 (−201) grown on Si- and C-faces of 4H–SiC substrates
| Autor: | Xu, Bei, Hu, Jichao, Zhang, Qi, He, Xiaomin, Wang, Xi, Li, Yao, Zhang, Chao, Dong, Linpeng, Pu, Hongbin |
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| Zdroj: | In Vacuum June 2024 224 |
| Databáze: | ScienceDirect |
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