MBE growth of mid-wavelength type II InAs/InAsSb superlattice photodetectors with wet etching and Al2O3 passivation

Autor: Liu, Bingfeng a, b, Zhu, Lianqing a, b, ⁎, Lu, Lidan b, Chen, Weiqiang b, Gong, Ruixin b, c, Xie, Ning b, Gong, Mingliang b, Feng, Qingsong b, Chen, Yang b, Zheng, Xiantong b, Dong, Mingli b, ⁎⁎
Zdroj: In Vacuum June 2024 224
Databáze: ScienceDirect