Gallium phosphide conformal film growth on in-situ tri-TBP dry-cleaned InGaP/GaAs using atomic hydrogen ALD

Autor: Yun, SeongUk, Lee, Ping-Che, Kuo, Cheng-Hsuan, Mcleod, Aaron J., Zhang, Zichen, Wang, Victor, Huang, James, Kashyap, Harshil, Winter, Charles H., Kummel, Andrew C.
Zdroj: In Vacuum February 2024 220
Databáze: ScienceDirect